Effects of substrate and annealing conditions on the ferroelectric properties of non-doped hfo2 deposited by rf plasma sputter
HIGHLIGHTS What: In this study the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO2 ) was analyzed. Ultimately, this study provides valuable insights into optimizing ferroelectric HfO2 for compatibility with conventional semiconductor devices, which could significantly impact the development of future ferroelectric devices. Who: Seokwon Lim et al. from the Department of Energy Systems Research, Ajou University, Suwon, Republic of Korea have published the Article: Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter, in the Journal: Nanomaterials 2024, 14, x FOR PEER REVIEW of /2024/ SUMMARY Currently, commercially available memory is mainly divided into volatile and nonvolatile memory, represented by dynamic random-access memory (DRAM) and NAND flash memory, respectively. Perovskite oxide, characterized by an ABX3 crystal_structure, has metal ions ...