Effects of substrate and annealing conditions on the ferroelectric properties of non-doped hfo2 deposited by rf plasma sputter




HIGHLIGHTS
  • What: In this study the effect of annealing and substrate conditions on the ferroelectricity of undoped hafnium oxide (HfO2 ) was analyzed. Ultimately, this study provides valuable insights into optimizing ferroelectric HfO2 for compatibility with conventional semiconductor devices, which could significantly impact the development of future ferroelectric devices.
  • Who: Seokwon Lim et al. from the Department of Energy Systems Research, Ajou University, Suwon, Republic of Korea have published the Article: Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter, in the Journal: Nanomaterials 2024, 14, x FOR PEER REVIEW of /2024/
SUMMARY

    Currently, commercially available memory is mainly divided into volatile and nonvolatile memory, represented by dynamic random-access memory (DRAM) and NAND flash memory, respectively. Perovskite oxide, characterized by an ABX3 crystal_structure, has metal ions at the center of each unit cell. Its characteristics vary depending on the crystal_structure, which generally consists of monoclinic, tetragonal, and orthorhombic phases. And pulsed laser deposition (PLD) also hard to induce the ferroelectricity of HfO2 with any pre- and post-treatment, like annealing. Due to these advantages, numerous studies have focused on fabricating ferroelectric HfO2 through sputtering followed by post-annealing. Post-annealing is necessary to induce ferroelectricity in HfO2 deposited by sputtering, requiring a high thermal budget. In this study, HfO2 was deposited on metal substrates such as Pt and TiN, as well as on a Si substrate, using RF sputtering and then annealed by rapid thermal annealing (RTA). The remanent polarization of HfO2 deposited on a Pt substrate and annealed at 600 ◦ C for 30 min was measured at 14.24 µC/cm2, meeting the low thermal budget requirements for ferroelectricity. Initially, the crystal_structure of the HfO2 thin film, as influenced by the substrate type, annealing temperature, and time, was analyzed using grazing incidence X-ray diffraction (GIXRD). The interface displayed a clear crystal_structure between HfO2 and TiN. The interface displayed a clear crystal_structure between HfO2 and TiN. The bulk HfO2HfO demonstrated a cleara crystal_structure with was not observed (see TEM-EDS images confirmed that that the substrate ininfluences the bulk and interface crystal_structures of HfO after annealing. While fluences the bulk and interface crystal_structures of HfO2 2after annealing. @@

LAY DEFINITIONS
  • Atomic force microscopy: A type of scanning probe microscopy in which a probe systematically rides across the surface of a sample being scanned in a raster pattern. The vertical position is recorded as a spring attached to the probe rises and falls in response to peaks and valleys on the surface
  • substrate: A wafer (slice or substrate) is a thin slice of semiconductor material, such as a crystalline silicon, used in electronics for the fabrication of integrated circuits and in photovoltaics for conventional, wafer-based solar cells. The wafer serves as the substrate for microelectronic devices built in and over the wafer and undergoes many microfabrication process steps such as doping or ion implantation, etching, deposition of various materials, and photolithographic patterning
  • Integrated circuit: An integrated circuit or monolithic integrated circuit is a set of electronic circuits on one small flat piece of semiconductor material that is normally silicon. The integration of large numbers of tiny MOS transistors into a small chip results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components
  • Transmission electron microscopy: Electron microscopy in which the ELECTRONS or their reaction products that pass down through the specimen are imaged below the plane of the specimen.
  • ferroelectricity: Ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed by the application of an external electric field. All ferroelectrics are pyroelectric, with the additional property that their natural electrical polarization is reversible
  • hafnium oxide: Hafnium oxide is the inorganic compound with the formula HfO2. Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium
  • sputtering: In physics, sputtering is a phenomenon in which microscopic particles of a solid material are ejected from its surface, after the material is itself bombarded by energetic particles of a plasma or gas. It occurs naturally in outer space, and can be an unwelcome source of wear in precision components
  • Plasma: Plasma is one of the four fundamental states of matter, the others being solid, liquid, and gas. A plasma has properties unlike those of the other states

Licence: cc-by

Site reference: https://www.mdpi.com/2079-4991/14/17/1386/pdf?version=1724571759

DOI reference: https://www.doi.org/10.3390/nano14171386

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